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| absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-source voltage -20 v v gss gate-source voltage 12 v i d drain current - continuous (note 1a) -1.7 a - pulsed -5 p d power dissipation for single operation (note 1a) 0.96 w (note 1b) 0.9 (note 1c) 0.7 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 130 c/w r jc thermal resistance, junction-to-case (note 1) 60 c/w package marking and ordering information device marking device reel size tape width quantity . 308 FDC6308P 7 ?? 8mm 3000 units - " . * " '/01'+2 34'+ ? 5 36 2 3474 ? 5 3 ) & ' ( $ * - " &7 * ( " 8 * ) * "2 9 , : &/ ; <<<< +(= " &' ,( 5 6 4 2 3 1 d1 s2 g1 d2 s1 g2 supersot -6 tm smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -15 mv/ c i dss zero gate voltage drain current v ds = -16 v, v gs = 0 v -1 a i gssf gate-body leakage current, forward v gs = 12 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -12 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -0.6 -1.1 -1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 2.7 mv/ c r ds(on) static drain-source on-resistance v gs = -4.5 v, i d = -1.7 a v gs = -4.5 v, i d = -1.7 a @125 c v gs = -2.5 v, i d = -1.4 a 0.143 0.22 0.25 0.18 0.28 0.30 ? i d(on) on-state drain current v gs = -4.5 v, v ds = -5 v -2.5 a g fs forward transconductance v ds = -5 v, i d = -1.7 a 4 s dynamic characteristics c iss input capacitance 265 pf c oss output capacitance 80 pf c rss reverse transfer capacitance v ds = -10 v, v gs = 0 v f = 1.0 mhz 45 pf switching characteristics (note 2) t d(on) turn-on delay time 6 12 ns t r turn-on rise time 9 18 ns t d(off) turn-off delay time 14 25 ns t f turn-off fall time v dd = -10 v, i d = -1 a v gs = -4.5 v, r gen = 6 ? 39ns q g total gate charge 3 5 nc q gs gate-source charge 0.7 nc q gd gate-drain charge v ds = -10 v, i d = -1.7 a v gs = -4.5 v 0.8 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -0.8 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.8 a (note 2) -0.8 -1.2 v ! "# "$ %&& '() *&+ , %& )-$ & *. * ! , /& )-$ &&&. * ! , 0& )-$ smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com |
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